inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRFP350FI features drain current C i d = 10a@ t c =25 drain source voltage- : v dss = 400v(min) static drain-source on-resistance : r ds(on) = 0.3 (max) fast switching description designed for use in switch mode power supplies and general purpose applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 400 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 10 a i dm drain current-single pluse 40 a p d total dissipation @t c =25 70 w t j max. operating junction temperature -55~150 t stg storage temperature -55~150 symbol parameter max unit r th j-c thermal resistance, junction to case 0.83 /w r th j-a thermal resistance, junction to ambient 80 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRFP350FI electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 400 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 8a 0.3 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 400v; v gs = 0 v ds = 320v; v gs = 0; t j = 150 250 1000 a v sd forward on-voltage i s = 10a; v gs = 0 1.6 v pdf pdffactory pro www.fineprint.cn
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